Post deposition annealing effect on properties of Y2O3/Al2O3 stacking gate dielectric on 4H-SiC
In this paper, the effect of post deposition annealing (PDA) on the chemical, structural, and electrical properties of the high-k Y 2 O 3 /Al 2 O 3 stacking dielectric on p-type 4H-SiC were studied. High-k dielectric provides a physically thicker film with equivalent capacitance, therefore better ex...
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| Main Authors: | , , , , , |
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| 格式: | Article |
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Elsevier
2019
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| 主題: | |
| 在線閱讀: | http://eprints.um.edu.my/22899/ https://doi.org/10.1016/j.matlet.2019.03.009 |
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