Staff View: Post deposition annealing effect on properties of Y2O3/Al2O3 stacking gate dielectric on 4H-SiC

Post deposition annealing effect on properties of Y2O3/Al2O3 stacking gate dielectric on 4H-SiC

In this paper, the effect of post deposition annealing (PDA) on the chemical, structural, and electrical properties of the high-k Y 2 O 3 /Al 2 O 3 stacking dielectric on p-type 4H-SiC were studied. High-k dielectric provides a physically thicker film with equivalent capacitance, therefore better ex...

Full description

Saved in:

Bibliographic Details
Main Authors:	Zhao, Feng, Amnuayphol, Oliver, Cheong, Kuan Yew, Wong, Yew Hoong, Jiang, Jheng-Yi, Huang, Chih-Fang
Format:	Article
Published:	Elsevier 2019
Subjects:	TJ Mechanical engineering and machinery TK Electrical engineering. Electronics Nuclear engineering
Online Access:	http://eprints.um.edu.my/22899/ https://doi.org/10.1016/j.matlet.2019.03.009
Tags:	Add Tag No Tags, Be the first to tag this record!

id	my.um.eprints.22899
record_format	eprints
spelling	my.um.eprints.228992019-11-01T01:33:01Z http://eprints.um.edu.my/22899/ Post deposition annealing effect on properties of Y2O3/Al2O3 stacking gate dielectric on 4H-SiC Zhao, Feng Amnuayphol, Oliver Cheong, Kuan Yew Wong, Yew Hoong Jiang, Jheng-Yi Huang, Chih-Fang TJ Mechanical engineering and machinery TK Electrical engineering. Electronics Nuclear engineering In this paper, the effect of post deposition annealing (PDA) on the chemical, structural, and electrical properties of the high-k Y 2 O 3 /Al 2 O 3 stacking dielectric on p-type 4H-SiC were studied. High-k dielectric provides a physically thicker film with equivalent capacitance, therefore better exploits the high breakdown strength of 4H-SiC in its MOSFET devices. The Y 2 O 3 /Al 2 O 3 stacking films were deposited using RF magnetron sputtering, with PDA in Ar ambient at 400 °C, 600 °C, 800 °C and 1000 °C. X-ray diffraction (XRD) and angle resolved X-ray photoelectron spectroscopy (XPS) results show that an Al 5 O 12 Y 3 crystal layer was formed in between Y 2 O 3 and Al 2 O 3 films after annealing above 600 °C. High resolution transmission electron microscope (HRTEM) was used to investigate the atomic structure and measure the thickness of each layer. Charges and dielectric strength of the stacking films were characterized by high frequency capacitance-voltage (C-V) and current-voltage (I-V) measurements. The lower charge density and higher dielectric strength were found after PDA at 800 °C and 1000 °C. Elsevier 2019 Article PeerReviewed Zhao, Feng and Amnuayphol, Oliver and Cheong, Kuan Yew and Wong, Yew Hoong and Jiang, Jheng-Yi and Huang, Chih-Fang (2019) Post deposition annealing effect on properties of Y2O3/Al2O3 stacking gate dielectric on 4H-SiC. Materials Letters, 245. pp. 174-177. ISSN 0167-577X https://doi.org/10.1016/j.matlet.2019.03.009 doi:10.1016/j.matlet.2019.03.009
institution	Universiti Malaya
building	UM Library
collection	Institutional Repository
continent	Asia
country	Malaysia
content_provider	Universiti Malaya
content_source	UM Research Repository
url_provider	http://eprints.um.edu.my/
topic	TJ Mechanical engineering and machinery TK Electrical engineering. Electronics Nuclear engineering
spellingShingle	TJ Mechanical engineering and machinery TK Electrical engineering. Electronics Nuclear engineering Zhao, Feng Amnuayphol, Oliver Cheong, Kuan Yew Wong, Yew Hoong Jiang, Jheng-Yi Huang, Chih-Fang Post deposition annealing effect on properties of Y2O3/Al2O3 stacking gate dielectric on 4H-SiC
description	In this paper, the effect of post deposition annealing (PDA) on the chemical, structural, and electrical properties of the high-k Y 2 O 3 /Al 2 O 3 stacking dielectric on p-type 4H-SiC were studied. High-k dielectric provides a physically thicker film with equivalent capacitance, therefore better exploits the high breakdown strength of 4H-SiC in its MOSFET devices. The Y 2 O 3 /Al 2 O 3 stacking films were deposited using RF magnetron sputtering, with PDA in Ar ambient at 400 °C, 600 °C, 800 °C and 1000 °C. X-ray diffraction (XRD) and angle resolved X-ray photoelectron spectroscopy (XPS) results show that an Al 5 O 12 Y 3 crystal layer was formed in between Y 2 O 3 and Al 2 O 3 films after annealing above 600 °C. High resolution transmission electron microscope (HRTEM) was used to investigate the atomic structure and measure the thickness of each layer. Charges and dielectric strength of the stacking films were characterized by high frequency capacitance-voltage (C-V) and current-voltage (I-V) measurements. The lower charge density and higher dielectric strength were found after PDA at 800 °C and 1000 °C.
format	Article
author	Zhao, Feng Amnuayphol, Oliver Cheong, Kuan Yew Wong, Yew Hoong Jiang, Jheng-Yi Huang, Chih-Fang
author_facet	Zhao, Feng Amnuayphol, Oliver Cheong, Kuan Yew Wong, Yew Hoong Jiang, Jheng-Yi Huang, Chih-Fang
author_sort	Zhao, Feng
title	Post deposition annealing effect on properties of Y2O3/Al2O3 stacking gate dielectric on 4H-SiC
title_short	Post deposition annealing effect on properties of Y2O3/Al2O3 stacking gate dielectric on 4H-SiC
title_full	Post deposition annealing effect on properties of Y2O3/Al2O3 stacking gate dielectric on 4H-SiC
title_fullStr	Post deposition annealing effect on properties of Y2O3/Al2O3 stacking gate dielectric on 4H-SiC
title_full_unstemmed	Post deposition annealing effect on properties of Y2O3/Al2O3 stacking gate dielectric on 4H-SiC
title_sort	post deposition annealing effect on properties of y2o3/al2o3 stacking gate dielectric on 4h-sic
publisher	Elsevier
publishDate	2019
url	http://eprints.um.edu.my/22899/ https://doi.org/10.1016/j.matlet.2019.03.009
_version_	1651867373189201920
score	13.211869

Post deposition annealing effect on properties of Y2O3/Al2O3 stacking gate dielectric on 4H-SiC

Similar Items