Metal organic chemical vapor deposition of m-plane GaN epi-layer using a three-step approach towards enhanced surface morphology
Specular m-plane (101¯0) gallium nitride (m-GaN) epi-layer are grown on m-plane (101¯0) sapphire substrates by metal organic chemical vapor deposition using a three-step approach. A two-step approach was used to grow m-GaN buffer layer (BL), while a three-step approach was applied to improve the sur...
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| Main Authors: | , , , , , , , , |
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| Format: | Article |
| Published: |
Elsevier
2018
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| Subjects: | |
| Online Access: | http://eprints.um.edu.my/22400/ https://doi.org/10.1016/j.tsf.2018.09.052 |
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