Staff View: Metal organic chemical vapor deposition of m-plane GaN epi-layer using a three-step approach towards enhanced surface morphology

Metal organic chemical vapor deposition of m-plane GaN epi-layer using a three-step approach towards enhanced surface morphology

Specular m-plane (101¯0) gallium nitride (m-GaN) epi-layer are grown on m-plane (101¯0) sapphire substrates by metal organic chemical vapor deposition using a three-step approach. A two-step approach was used to grow m-GaN buffer layer (BL), while a three-step approach was applied to improve the sur...

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Main Authors:	Azman, Adreen, Shuhaimi, Ahmad, Omar, Al-Zuhairi, Kamarundzaman, Anas, Abdul Khudus, Muhammad Imran Mustafa, Ariff, Azharul, Samsudin, M.E.A., Zainal, Norzaini, Rahman, Saadah Abdul
Format:	Article
Published:	Elsevier 2018
Subjects:	Q Science (General) QC Physics
Online Access:	http://eprints.um.edu.my/22400/ https://doi.org/10.1016/j.tsf.2018.09.052
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spelling	my.um.eprints.224002019-09-18T02:12:29Z http://eprints.um.edu.my/22400/ Metal organic chemical vapor deposition of m-plane GaN epi-layer using a three-step approach towards enhanced surface morphology Azman, Adreen Shuhaimi, Ahmad Omar, Al-Zuhairi Kamarundzaman, Anas Abdul Khudus, Muhammad Imran Mustafa Ariff, Azharul Samsudin, M.E.A. Zainal, Norzaini Rahman, Saadah Abdul Q Science (General) QC Physics Specular m-plane (101¯0) gallium nitride (m-GaN) epi-layer are grown on m-plane (101¯0) sapphire substrates by metal organic chemical vapor deposition using a three-step approach. A two-step approach was used to grow m-GaN buffer layer (BL), while a three-step approach was applied to improve the surface morphology of the top m-GaN epi-layer at high temperature. The three-step approach started with growing m-aluminum nitride nucleation layer with an optimized ammonia flux during the growth of aluminum nitride. Then the temperature was ramped up during the recrystallization step before the m-GaN BL deposition at low-temperature and the growth of m-GaN layer at high-temperature for the final step. Unexpectedly, when ammonia flow was intentionally halted during the recrystallization step, the surface morphology of the BL drastically changed from three- to two- dimensional with an abrupt cross-sectional structure. This in turn facilitated the complete coalescence of the m-GaN layer as revealed by field emission scanning electron microscopy. The three-step technique was found to affect the quality of m-GaN epi-layer as the samples exhibit improved crystallinity with X-ray diffraction rocking curves widths of 4680 and 1980 arcsec along the azimuth, perpendicular and parallel to [101¯0] directions, respectively. Elsevier 2018 Article PeerReviewed Azman, Adreen and Shuhaimi, Ahmad and Omar, Al-Zuhairi and Kamarundzaman, Anas and Abdul Khudus, Muhammad Imran Mustafa and Ariff, Azharul and Samsudin, M.E.A. and Zainal, Norzaini and Rahman, Saadah Abdul (2018) Metal organic chemical vapor deposition of m-plane GaN epi-layer using a three-step approach towards enhanced surface morphology. Thin Solid Films, 667. pp. 48-54. ISSN 0040-6090 https://doi.org/10.1016/j.tsf.2018.09.052 doi:10.1016/j.tsf.2018.09.052
institution	Universiti Malaya
building	UM Library
collection	Institutional Repository
continent	Asia
country	Malaysia
content_provider	Universiti Malaya
content_source	UM Research Repository
url_provider	http://eprints.um.edu.my/
topic	Q Science (General) QC Physics
spellingShingle	Q Science (General) QC Physics Azman, Adreen Shuhaimi, Ahmad Omar, Al-Zuhairi Kamarundzaman, Anas Abdul Khudus, Muhammad Imran Mustafa Ariff, Azharul Samsudin, M.E.A. Zainal, Norzaini Rahman, Saadah Abdul Metal organic chemical vapor deposition of m-plane GaN epi-layer using a three-step approach towards enhanced surface morphology
description	Specular m-plane (101¯0) gallium nitride (m-GaN) epi-layer are grown on m-plane (101¯0) sapphire substrates by metal organic chemical vapor deposition using a three-step approach. A two-step approach was used to grow m-GaN buffer layer (BL), while a three-step approach was applied to improve the surface morphology of the top m-GaN epi-layer at high temperature. The three-step approach started with growing m-aluminum nitride nucleation layer with an optimized ammonia flux during the growth of aluminum nitride. Then the temperature was ramped up during the recrystallization step before the m-GaN BL deposition at low-temperature and the growth of m-GaN layer at high-temperature for the final step. Unexpectedly, when ammonia flow was intentionally halted during the recrystallization step, the surface morphology of the BL drastically changed from three- to two- dimensional with an abrupt cross-sectional structure. This in turn facilitated the complete coalescence of the m-GaN layer as revealed by field emission scanning electron microscopy. The three-step technique was found to affect the quality of m-GaN epi-layer as the samples exhibit improved crystallinity with X-ray diffraction rocking curves widths of 4680 and 1980 arcsec along the azimuth, perpendicular and parallel to [101¯0] directions, respectively.
format	Article
author	Azman, Adreen Shuhaimi, Ahmad Omar, Al-Zuhairi Kamarundzaman, Anas Abdul Khudus, Muhammad Imran Mustafa Ariff, Azharul Samsudin, M.E.A. Zainal, Norzaini Rahman, Saadah Abdul
author_facet	Azman, Adreen Shuhaimi, Ahmad Omar, Al-Zuhairi Kamarundzaman, Anas Abdul Khudus, Muhammad Imran Mustafa Ariff, Azharul Samsudin, M.E.A. Zainal, Norzaini Rahman, Saadah Abdul
author_sort	Azman, Adreen
title	Metal organic chemical vapor deposition of m-plane GaN epi-layer using a three-step approach towards enhanced surface morphology
title_short	Metal organic chemical vapor deposition of m-plane GaN epi-layer using a three-step approach towards enhanced surface morphology
title_full	Metal organic chemical vapor deposition of m-plane GaN epi-layer using a three-step approach towards enhanced surface morphology
title_fullStr	Metal organic chemical vapor deposition of m-plane GaN epi-layer using a three-step approach towards enhanced surface morphology
title_full_unstemmed	Metal organic chemical vapor deposition of m-plane GaN epi-layer using a three-step approach towards enhanced surface morphology
title_sort	metal organic chemical vapor deposition of m-plane gan epi-layer using a three-step approach towards enhanced surface morphology
publisher	Elsevier
publishDate	2018
url	http://eprints.um.edu.my/22400/ https://doi.org/10.1016/j.tsf.2018.09.052
_version_	1646210230621569024
score	13.244413

Metal organic chemical vapor deposition of m-plane GaN epi-layer using a three-step approach towards enhanced surface morphology

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