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Characterization of high electron mobility transistor (HEMT) / Mohd Nazli Mohd Nushi

In this project, we shall attempt to reproduce simultaneously the DC and RF characteristics of the HEMT using a unique set of physical device parameters. The technology that used in this project is equal to 0.5 urn In this report, a DC models for HEMT's will be represented. This included the Id...

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Main Author: Mohd Nushi, Mohd Nazli
Format: Thesis
Language:English
Published: 2008
Subjects:
TK Electrical engineering. Electronics. Nuclear engineering
Online Access:https://ir.uitm.edu.my/id/eprint/98599/1/98599.pdf
https://ir.uitm.edu.my/id/eprint/98599/
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spelling my.uitm.ir.985992024-08-22T09:35:08Z https://ir.uitm.edu.my/id/eprint/98599/ Characterization of high electron mobility transistor (HEMT) / Mohd Nazli Mohd Nushi Mohd Nushi, Mohd Nazli TK Electrical engineering. Electronics. Nuclear engineering In this project, we shall attempt to reproduce simultaneously the DC and RF characteristics of the HEMT using a unique set of physical device parameters. The technology that used in this project is equal to 0.5 urn In this report, a DC models for HEMT's will be represented. This included the Id-Vg characteristics and other topics related to the performance of DC HEMT. Then the RF characteristics for HEMT also discussed in this report. The procedure allows important parameters used, including the donor concentration, doped layer thickness, spacer layer thickness, physical gate length, source resistance, drain resistance, and the saturated electron velocity in the two dimensional electron gas (2DEG) and in the doped AlGaAs to be obtained. Finally, all the result and models including DC model, AC model, velocity-field model for 2DEG and also phenomenological mobility modeling for HEMT are obtained at the end of the project. The DC model (Id-Vg characteristic) then will be compared with result from Silvaco to measure the accurateness of the model. There are slightly different between the result from the theoretical (Python) and Silvaco. In addition, the result from Silvaco is much more accurate compare with the theoretical because there is some element that does not contained in the theoretical part liked temperature, pressure, humidity, types of fabrication and others. Some improvement can be made to the HEMT. By reducing the gate length, it will provide better RF characteristics for HEMT. The future HEMT can improve all the characteristics of HEMT to make the devices give the best performance due to the applications. 2008 Thesis NonPeerReviewed text en https://ir.uitm.edu.my/id/eprint/98599/1/98599.pdf Characterization of high electron mobility transistor (HEMT) / Mohd Nazli Mohd Nushi. (2008) Degree thesis, thesis, Universiti Teknologi MARA (UiTM).
institution Universiti Teknologi Mara
building Tun Abdul Razak Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Teknologi Mara
content_source UiTM Institutional Repository
url_provider http://ir.uitm.edu.my/
language English
topic TK Electrical engineering. Electronics. Nuclear engineering
spellingShingle TK Electrical engineering. Electronics. Nuclear engineering
Mohd Nushi, Mohd Nazli
Characterization of high electron mobility transistor (HEMT) / Mohd Nazli Mohd Nushi
description In this project, we shall attempt to reproduce simultaneously the DC and RF characteristics of the HEMT using a unique set of physical device parameters. The technology that used in this project is equal to 0.5 urn In this report, a DC models for HEMT's will be represented. This included the Id-Vg characteristics and other topics related to the performance of DC HEMT. Then the RF characteristics for HEMT also discussed in this report. The procedure allows important parameters used, including the donor concentration, doped layer thickness, spacer layer thickness, physical gate length, source resistance, drain resistance, and the saturated electron velocity in the two dimensional electron gas (2DEG) and in the doped AlGaAs to be obtained. Finally, all the result and models including DC model, AC model, velocity-field model for 2DEG and also phenomenological mobility modeling for HEMT are obtained at the end of the project. The DC model (Id-Vg characteristic) then will be compared with result from Silvaco to measure the accurateness of the model. There are slightly different between the result from the theoretical (Python) and Silvaco. In addition, the result from Silvaco is much more accurate compare with the theoretical because there is some element that does not contained in the theoretical part liked temperature, pressure, humidity, types of fabrication and others. Some improvement can be made to the HEMT. By reducing the gate length, it will provide better RF characteristics for HEMT. The future HEMT can improve all the characteristics of HEMT to make the devices give the best performance due to the applications.
format Thesis
author Mohd Nushi, Mohd Nazli
author_facet Mohd Nushi, Mohd Nazli
author_sort Mohd Nushi, Mohd Nazli
title Characterization of high electron mobility transistor (HEMT) / Mohd Nazli Mohd Nushi
title_short Characterization of high electron mobility transistor (HEMT) / Mohd Nazli Mohd Nushi
title_full Characterization of high electron mobility transistor (HEMT) / Mohd Nazli Mohd Nushi
title_fullStr Characterization of high electron mobility transistor (HEMT) / Mohd Nazli Mohd Nushi
title_full_unstemmed Characterization of high electron mobility transistor (HEMT) / Mohd Nazli Mohd Nushi
title_sort characterization of high electron mobility transistor (hemt) / mohd nazli mohd nushi
publishDate 2008
url https://ir.uitm.edu.my/id/eprint/98599/1/98599.pdf
https://ir.uitm.edu.my/id/eprint/98599/
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score 13.211869

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