Staff View: Heterojunction ZnO on silicon for potential UV to visible photodetector utilising SILVACO TCAD effect of thickness and doping / A. Azmi Ahmad ... [et al.]

Heterojunction ZnO on silicon for potential UV to visible photodetector utilising SILVACO TCAD effect of thickness and doping / A. Azmi Ahmad ... [et al.]

In this work, the study of heterojunction Zinc Oxide on Silicon to enhance UV photodetector performance has been conducted. The study was carried out using a SILVACO ATLAS device simulator. There are two parameters studied in this project are: to find the best thickness of ZnO and suitable doping co...

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Main Authors:	Azmi, Azila, Abd Rahim, Alhan Farhanah, Mohd Razali, Nor Shafika, Radzali, Rosfariza, Mahmood, Ainorkhilah, Hamzah, Irni Hamiza, Abdullah, Mohd Hanapiah, Mohamed, Mohamed Fauzi Packeer
Format:	Article
Language:	English
Published:	Universiti Teknologi MARA, Pulau Pinang 2022
Subjects:	TK Electrical engineering. Electronics. Nuclear engineering Electronics Pattern recognition systems Photoelectronic devices (General)
Online Access:	https://ir.uitm.edu.my/id/eprint/68013/1/68013.pdf https://ir.uitm.edu.my/id/eprint/68013/ https://uppp.uitm.edu.my
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id	my.uitm.ir.68013
record_format	eprints
spelling	my.uitm.ir.680132022-10-06T08:27:55Z https://ir.uitm.edu.my/id/eprint/68013/ Heterojunction ZnO on silicon for potential UV to visible photodetector utilising SILVACO TCAD effect of thickness and doping / A. Azmi Ahmad ... [et al.] Azmi, Azila Abd Rahim, Alhan Farhanah Mohd Razali, Nor Shafika Radzali, Rosfariza Mahmood, Ainorkhilah Hamzah, Irni Hamiza Abdullah, Mohd Hanapiah Mohamed, Mohamed Fauzi Packeer TK Electrical engineering. Electronics. Nuclear engineering Electronics Pattern recognition systems Photoelectronic devices (General) In this work, the study of heterojunction Zinc Oxide on Silicon to enhance UV photodetector performance has been conducted. The study was carried out using a SILVACO ATLAS device simulator. There are two parameters studied in this project are: to find the best thickness of ZnO and suitable doping concentration of ZnO on the silicon substrate as a photodetector device. There are three different thicknesses of ZnO (0.5 μm ,1 μm and 2 μm) and four different doping concentrations of ZnO applied (1x1015 cm-3, 1x1019 cm-3, 1x1020 cm-3 and 1x1021 cm-3). The performance of the ZnO on Si as a photodetector was evaluated by dark and photo current-voltage (I-V) characteristics. It was found that the optimum thickness of ZnO is at 1 μm and the suitable doping concentration of ZnO is at 1x1021 cm-3 since with these values, the photocurrent response is high, and in spectral response, the peak value for both is depicted in a visible region, which is suitable as UV photodetector device criteria. Universiti Teknologi MARA, Pulau Pinang 2022-09 Article PeerReviewed text en https://ir.uitm.edu.my/id/eprint/68013/1/68013.pdf Heterojunction ZnO on silicon for potential UV to visible photodetector utilising SILVACO TCAD effect of thickness and doping / A. Azmi Ahmad ... [et al.]. (2022) ESTEEM Academic Journal, 18. pp. 90-102. ISSN 2289-4934 https://uppp.uitm.edu.my
institution	Universiti Teknologi Mara
building	Tun Abdul Razak Library
collection	Institutional Repository
continent	Asia
country	Malaysia
content_provider	Universiti Teknologi Mara
content_source	UiTM Institutional Repository
url_provider	http://ir.uitm.edu.my/
language	English
topic	TK Electrical engineering. Electronics. Nuclear engineering Electronics Pattern recognition systems Photoelectronic devices (General)
spellingShingle	TK Electrical engineering. Electronics. Nuclear engineering Electronics Pattern recognition systems Photoelectronic devices (General) Azmi, Azila Abd Rahim, Alhan Farhanah Mohd Razali, Nor Shafika Radzali, Rosfariza Mahmood, Ainorkhilah Hamzah, Irni Hamiza Abdullah, Mohd Hanapiah Mohamed, Mohamed Fauzi Packeer Heterojunction ZnO on silicon for potential UV to visible photodetector utilising SILVACO TCAD effect of thickness and doping / A. Azmi Ahmad ... [et al.]
description	In this work, the study of heterojunction Zinc Oxide on Silicon to enhance UV photodetector performance has been conducted. The study was carried out using a SILVACO ATLAS device simulator. There are two parameters studied in this project are: to find the best thickness of ZnO and suitable doping concentration of ZnO on the silicon substrate as a photodetector device. There are three different thicknesses of ZnO (0.5 μm ,1 μm and 2 μm) and four different doping concentrations of ZnO applied (1x1015 cm-3, 1x1019 cm-3, 1x1020 cm-3 and 1x1021 cm-3). The performance of the ZnO on Si as a photodetector was evaluated by dark and photo current-voltage (I-V) characteristics. It was found that the optimum thickness of ZnO is at 1 μm and the suitable doping concentration of ZnO is at 1x1021 cm-3 since with these values, the photocurrent response is high, and in spectral response, the peak value for both is depicted in a visible region, which is suitable as UV photodetector device criteria.
format	Article
author	Azmi, Azila Abd Rahim, Alhan Farhanah Mohd Razali, Nor Shafika Radzali, Rosfariza Mahmood, Ainorkhilah Hamzah, Irni Hamiza Abdullah, Mohd Hanapiah Mohamed, Mohamed Fauzi Packeer
author_facet	Azmi, Azila Abd Rahim, Alhan Farhanah Mohd Razali, Nor Shafika Radzali, Rosfariza Mahmood, Ainorkhilah Hamzah, Irni Hamiza Abdullah, Mohd Hanapiah Mohamed, Mohamed Fauzi Packeer
author_sort	Azmi, Azila
title	Heterojunction ZnO on silicon for potential UV to visible photodetector utilising SILVACO TCAD effect of thickness and doping / A. Azmi Ahmad ... [et al.]
title_short	Heterojunction ZnO on silicon for potential UV to visible photodetector utilising SILVACO TCAD effect of thickness and doping / A. Azmi Ahmad ... [et al.]
title_full	Heterojunction ZnO on silicon for potential UV to visible photodetector utilising SILVACO TCAD effect of thickness and doping / A. Azmi Ahmad ... [et al.]
title_fullStr	Heterojunction ZnO on silicon for potential UV to visible photodetector utilising SILVACO TCAD effect of thickness and doping / A. Azmi Ahmad ... [et al.]
title_full_unstemmed	Heterojunction ZnO on silicon for potential UV to visible photodetector utilising SILVACO TCAD effect of thickness and doping / A. Azmi Ahmad ... [et al.]
title_sort	heterojunction zno on silicon for potential uv to visible photodetector utilising silvaco tcad effect of thickness and doping / a. azmi ahmad ... [et al.]
publisher	Universiti Teknologi MARA, Pulau Pinang
publishDate	2022
url	https://ir.uitm.edu.my/id/eprint/68013/1/68013.pdf https://ir.uitm.edu.my/id/eprint/68013/ https://uppp.uitm.edu.my
_version_	1746213096919138304
score	13.211869

Heterojunction ZnO on silicon for potential UV to visible photodetector utilising SILVACO TCAD effect of thickness and doping / A. Azmi Ahmad ... [et al.]

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