Heterojunction ZnO on silicon for potential UV to visible photodetector utilising SILVACO TCAD effect of thickness and doping / A. Azmi Ahmad ... [et al.]
In this work, the study of heterojunction Zinc Oxide on Silicon to enhance UV photodetector performance has been conducted. The study was carried out using a SILVACO ATLAS device simulator. There are two parameters studied in this project are: to find the best thickness of ZnO and suitable doping co...
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| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Universiti Teknologi MARA, Pulau Pinang
2022
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| Subjects: | |
| Online Access: | https://ir.uitm.edu.my/id/eprint/68013/1/68013.pdf https://ir.uitm.edu.my/id/eprint/68013/ https://uppp.uitm.edu.my |
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| Summary: | In this work, the study of heterojunction Zinc Oxide on Silicon to enhance UV photodetector performance has been conducted. The study was carried out using a SILVACO ATLAS device simulator. There are two parameters studied in this project are: to find the best thickness of ZnO and suitable doping concentration of ZnO on the silicon substrate as a photodetector device. There are three different thicknesses of ZnO (0.5 μm ,1 μm and 2 μm) and four different doping concentrations of ZnO applied (1x1015 cm-3, 1x1019 cm-3, 1x1020 cm-3 and 1x1021 cm-3). The performance of the ZnO on Si as a photodetector was evaluated by dark and photo current-voltage (I-V) characteristics. It was found that the optimum thickness of ZnO is at 1 μm and the suitable doping concentration of ZnO is at 1x1021 cm-3 since with these values, the photocurrent response is high, and in spectral response, the peak value for both is depicted in a visible region, which is suitable as UV photodetector device criteria. |
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