Effect of oxide type and thickness towards NMOS I-V characteristics / Farah Adibah Ali
Silicon dioxide (SiO2) is the gate component on N-type Metal Oxide Semiconductor (NMOS) which play a very important role in the transistor operation. Growing SiO2 on the wafer substrate can be done by two methods which are by dry and wet oxidation. These two methods have different characteristics. H...
Saved in:
| 主要作者: | |
|---|---|
| 格式: | Student Project |
| 語言: | English |
| 出版: |
2010
|
| 主題: | |
| 在線閱讀: | https://ir.uitm.edu.my/id/eprint/45217/1/45217.pdf https://ir.uitm.edu.my/id/eprint/45217/ |
| 標簽: |
添加標簽
沒有標簽, 成為第一個標記此記錄!
|