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Effect of oxide type and thickness towards NMOS I-V characteristics / Farah Adibah Ali

Silicon dioxide (SiO2) is the gate component on N-type Metal Oxide Semiconductor (NMOS) which play a very important role in the transistor operation. Growing SiO2 on the wafer substrate can be done by two methods which are by dry and wet oxidation. These two methods have different characteristics. H...

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Main Author: Ali, Farah Adibah
Format: Student Project
Language:English
Published: 2010
Subjects:
Heat
Electricity
Dielectrics
Online Access:https://ir.uitm.edu.my/id/eprint/45217/1/45217.pdf
https://ir.uitm.edu.my/id/eprint/45217/
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spelling my.uitm.ir.452172022-11-11T06:38:24Z https://ir.uitm.edu.my/id/eprint/45217/ Effect of oxide type and thickness towards NMOS I-V characteristics / Farah Adibah Ali Ali, Farah Adibah Heat Electricity Dielectrics Silicon dioxide (SiO2) is the gate component on N-type Metal Oxide Semiconductor (NMOS) which play a very important role in the transistor operation. Growing SiO2 on the wafer substrate can be done by two methods which are by dry and wet oxidation. These two methods have different characteristics. Hence this study is to investigate the effect of oxide type and thickness towards NMOS I-V characteristics and also to come out with the method on fabricating NMOS. Upon fabricating NMOS, the SiO2 thickness is varied for each different type of oxidation process. Then the NMOS is tested with respect to its current-voltage relationship. This study has found out that wet oxidation has higher growth rate as compared to dry oxidation while dry oxidation produce a better film quality. The fabrication of NMOS has succeeded in which the structure of NMOS is obtained. But analysis on the current-voltage characteristics cannot be done since the device shows violation towards ideal characteristics. The gate component fails to exhibit as a dielectric. This might due to some limitations and inaccuracy while fabrication. 2010 Student Project NonPeerReviewed text en https://ir.uitm.edu.my/id/eprint/45217/1/45217.pdf Effect of oxide type and thickness towards NMOS I-V characteristics / Farah Adibah Ali. (2010) [Student Project] (Unpublished)
institution Universiti Teknologi Mara
building Tun Abdul Razak Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Teknologi Mara
content_source UiTM Institutional Repository
url_provider http://ir.uitm.edu.my/
language English
topic Heat
Electricity
Dielectrics
spellingShingle Heat
Electricity
Dielectrics
Ali, Farah Adibah
Effect of oxide type and thickness towards NMOS I-V characteristics / Farah Adibah Ali
description Silicon dioxide (SiO2) is the gate component on N-type Metal Oxide Semiconductor (NMOS) which play a very important role in the transistor operation. Growing SiO2 on the wafer substrate can be done by two methods which are by dry and wet oxidation. These two methods have different characteristics. Hence this study is to investigate the effect of oxide type and thickness towards NMOS I-V characteristics and also to come out with the method on fabricating NMOS. Upon fabricating NMOS, the SiO2 thickness is varied for each different type of oxidation process. Then the NMOS is tested with respect to its current-voltage relationship. This study has found out that wet oxidation has higher growth rate as compared to dry oxidation while dry oxidation produce a better film quality. The fabrication of NMOS has succeeded in which the structure of NMOS is obtained. But analysis on the current-voltage characteristics cannot be done since the device shows violation towards ideal characteristics. The gate component fails to exhibit as a dielectric. This might due to some limitations and inaccuracy while fabrication.
format Student Project
author Ali, Farah Adibah
author_facet Ali, Farah Adibah
author_sort Ali, Farah Adibah
title Effect of oxide type and thickness towards NMOS I-V characteristics / Farah Adibah Ali
title_short Effect of oxide type and thickness towards NMOS I-V characteristics / Farah Adibah Ali
title_full Effect of oxide type and thickness towards NMOS I-V characteristics / Farah Adibah Ali
title_fullStr Effect of oxide type and thickness towards NMOS I-V characteristics / Farah Adibah Ali
title_full_unstemmed Effect of oxide type and thickness towards NMOS I-V characteristics / Farah Adibah Ali
title_sort effect of oxide type and thickness towards nmos i-v characteristics / farah adibah ali
publishDate 2010
url https://ir.uitm.edu.my/id/eprint/45217/1/45217.pdf
https://ir.uitm.edu.my/id/eprint/45217/
_version_ 1751539814864257024
score 13.211869

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