The effects of P and N scaling on PN-junction characteristic / Ain Zubaidah Maslihan
The wet oxidation process is chosen to grow the oxide layer on the wafer surface. It is because the wet oxidation process has a significantly higher oxidation rate than the dry oxidation process. The n-type wafer was doped with the p-type material semiconductor, which is Boron. The Boron was doped o...
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| Format: | Student Project |
| Language: | English |
| Published: |
2010
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| Online Access: | https://ir.uitm.edu.my/id/eprint/45052/1/45052.pdf https://ir.uitm.edu.my/id/eprint/45052/ |
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