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Characterization and fabrication of 90nm PMOS with strained silicon using TCAD silvaco: article / Mohd AriffBin Ab Hamid

The paper is looking into the enhancement of conventional 90nm PMOS by using graded silicon germanium layer (SiGe) within the channel and bulk of semiconductor. The performance of conventional 90nm PMOS and 90nm PMOS with silicon germanium layer was compared. A process simulation of Strained Silicon...

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Main Author: Ab Hamid, Mohd AriffBin
Format: Article
Language:English
Subjects:
TK Electrical engineering. Electronics. Nuclear engineering
Online Access:https://ir.uitm.edu.my/id/eprint/108327/1/108327.pdf
https://ir.uitm.edu.my/id/eprint/108327/
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spelling my.uitm.ir.1083272024-12-25T09:12:11Z https://ir.uitm.edu.my/id/eprint/108327/ Characterization and fabrication of 90nm PMOS with strained silicon using TCAD silvaco: article / Mohd AriffBin Ab Hamid Ab Hamid, Mohd AriffBin TK Electrical engineering. Electronics. Nuclear engineering The paper is looking into the enhancement of conventional 90nm PMOS by using graded silicon germanium layer (SiGe) within the channel and bulk of semiconductor. The performance of conventional 90nm PMOS and 90nm PMOS with silicon germanium layer was compared. A process simulation of Strained Silicon PMOS and its electrical characterization was done using TCAD tool. The analysis focused on Id-Vg, Id-Vd characteristic, and hole mobility changes. The output characteristics were also obtained for Strain Silicon PMOS which showed an improvement of drain current compared with conventional PMOS. Article PeerReviewed text en https://ir.uitm.edu.my/id/eprint/108327/1/108327.pdf Characterization and fabrication of 90nm PMOS with strained silicon using TCAD silvaco: article / Mohd AriffBin Ab Hamid. pp. 1-6.
institution Universiti Teknologi Mara
building Tun Abdul Razak Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Teknologi Mara
content_source UiTM Institutional Repository
url_provider http://ir.uitm.edu.my/
language English
topic TK Electrical engineering. Electronics. Nuclear engineering
spellingShingle TK Electrical engineering. Electronics. Nuclear engineering
Ab Hamid, Mohd AriffBin
Characterization and fabrication of 90nm PMOS with strained silicon using TCAD silvaco: article / Mohd AriffBin Ab Hamid
description The paper is looking into the enhancement of conventional 90nm PMOS by using graded silicon germanium layer (SiGe) within the channel and bulk of semiconductor. The performance of conventional 90nm PMOS and 90nm PMOS with silicon germanium layer was compared. A process simulation of Strained Silicon PMOS and its electrical characterization was done using TCAD tool. The analysis focused on Id-Vg, Id-Vd characteristic, and hole mobility changes. The output characteristics were also obtained for Strain Silicon PMOS which showed an improvement of drain current compared with conventional PMOS.
format Article
author Ab Hamid, Mohd AriffBin
author_facet Ab Hamid, Mohd AriffBin
author_sort Ab Hamid, Mohd AriffBin
title Characterization and fabrication of 90nm PMOS with strained silicon using TCAD silvaco: article / Mohd AriffBin Ab Hamid
title_short Characterization and fabrication of 90nm PMOS with strained silicon using TCAD silvaco: article / Mohd AriffBin Ab Hamid
title_full Characterization and fabrication of 90nm PMOS with strained silicon using TCAD silvaco: article / Mohd AriffBin Ab Hamid
title_fullStr Characterization and fabrication of 90nm PMOS with strained silicon using TCAD silvaco: article / Mohd AriffBin Ab Hamid
title_full_unstemmed Characterization and fabrication of 90nm PMOS with strained silicon using TCAD silvaco: article / Mohd AriffBin Ab Hamid
title_sort characterization and fabrication of 90nm pmos with strained silicon using tcad silvaco: article / mohd ariffbin ab hamid
url https://ir.uitm.edu.my/id/eprint/108327/1/108327.pdf
https://ir.uitm.edu.my/id/eprint/108327/
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score 13.223943

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