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Fabrication and characterization of 130nm NMOS using silvaco software / Mas Fezah Latib

This paper presents to find the sequence of dominance for factors that determine the performance of a 130nm technology NMOS transistor. Going to 130nm, requires a lot of changes in the fabrication technique. The supply and threshold voltages will have to continually scale to sustain performance incr...

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Main Author: Latib, Mas Fezah
Format: Thesis
Language:English
Published: 2007
Subjects:
Application software
Online Access:https://ir.uitm.edu.my/id/eprint/102919/1/102919.pdf
https://ir.uitm.edu.my/id/eprint/102919/
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spelling my.uitm.ir.1029192024-11-20T07:20:22Z https://ir.uitm.edu.my/id/eprint/102919/ Fabrication and characterization of 130nm NMOS using silvaco software / Mas Fezah Latib Latib, Mas Fezah Application software This paper presents to find the sequence of dominance for factors that determine the performance of a 130nm technology NMOS transistor. Going to 130nm, requires a lot of changes in the fabrication technique. The supply and threshold voltages will have to continually scale to sustain performance increase, limit energy consumption, control power dissipation, and maintain reliability. ATHENA and ATLAS module of SILVACO software are the tools used in simulating the fabrication and also simulating the electrical performance of the transistors. The parameters under investigation were the threshold voltage (VTH) value, ID-VD and ID-Vg relationships. The data produced from the experiments were used to determine the sequence of dominance for the factors involved in the transistor's abovementioned characteristics. From the experimental results, it was shown that the dopant implantation dosage at the source/drain active area contribute the most in determining the Vth value and also for determining the Id-Vg relationship. This is followed by the dosage for V-M adjustment implantation, the dielectric thickness and lastly the dosage of the halo implantation. However, there is no clear pattern found in determining the Id-Vd relationship. 2007 Thesis NonPeerReviewed text en https://ir.uitm.edu.my/id/eprint/102919/1/102919.pdf Fabrication and characterization of 130nm NMOS using silvaco software / Mas Fezah Latib. (2007) Degree thesis, thesis, Universiti Teknologi MARA (UiTM). <http://terminalib.uitm.edu.my/102919.pdf>
institution Universiti Teknologi Mara
building Tun Abdul Razak Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Teknologi Mara
content_source UiTM Institutional Repository
url_provider http://ir.uitm.edu.my/
language English
topic Application software
spellingShingle Application software
Latib, Mas Fezah
Fabrication and characterization of 130nm NMOS using silvaco software / Mas Fezah Latib
description This paper presents to find the sequence of dominance for factors that determine the performance of a 130nm technology NMOS transistor. Going to 130nm, requires a lot of changes in the fabrication technique. The supply and threshold voltages will have to continually scale to sustain performance increase, limit energy consumption, control power dissipation, and maintain reliability. ATHENA and ATLAS module of SILVACO software are the tools used in simulating the fabrication and also simulating the electrical performance of the transistors. The parameters under investigation were the threshold voltage (VTH) value, ID-VD and ID-Vg relationships. The data produced from the experiments were used to determine the sequence of dominance for the factors involved in the transistor's abovementioned characteristics. From the experimental results, it was shown that the dopant implantation dosage at the source/drain active area contribute the most in determining the Vth value and also for determining the Id-Vg relationship. This is followed by the dosage for V-M adjustment implantation, the dielectric thickness and lastly the dosage of the halo implantation. However, there is no clear pattern found in determining the Id-Vd relationship.
format Thesis
author Latib, Mas Fezah
author_facet Latib, Mas Fezah
author_sort Latib, Mas Fezah
title Fabrication and characterization of 130nm NMOS using silvaco software / Mas Fezah Latib
title_short Fabrication and characterization of 130nm NMOS using silvaco software / Mas Fezah Latib
title_full Fabrication and characterization of 130nm NMOS using silvaco software / Mas Fezah Latib
title_fullStr Fabrication and characterization of 130nm NMOS using silvaco software / Mas Fezah Latib
title_full_unstemmed Fabrication and characterization of 130nm NMOS using silvaco software / Mas Fezah Latib
title_sort fabrication and characterization of 130nm nmos using silvaco software / mas fezah latib
publishDate 2007
url https://ir.uitm.edu.my/id/eprint/102919/1/102919.pdf
https://ir.uitm.edu.my/id/eprint/102919/
_version_ 1817847201993326592
score 13.222552

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