The radiation effect on low noise amplifier implemented in the space-aerial–terrestrial integrated 5G networks
This paper provides the details of a study on the effects of electron irradiation on two Low Noise Amplifiers (LNA), the Gallium-Arsenide (GaAs) pseudomorphic high electron mobility transistor (pHEMT) based and the Silicon-Germanium (SiGe) Heterojunction Bipolar Transistor (HBT)-based. Previous stud...
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| Main Authors: | , , |
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| Format: | Article |
| Language: | English English English English |
| Published: |
IEEE-Inst Electrical Electronics Engineers Inc
2021
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| Subjects: | |
| Online Access: | http://irep.iium.edu.my/89040/13/89040_The%20Radiation%20Effect%20on%20Low%20Noise%20Amplifier_article.pdf http://irep.iium.edu.my/89040/14/89040_The%20Radiation%20Effect%20on%20Low%20Noise%20Amplifier_scopus.pdf http://irep.iium.edu.my/89040/15/89040_The%20Radiation%20Effect%20on%20Low%20Noise%20Amplifier_wos.pdf http://irep.iium.edu.my/89040/2/Acceptance%20letter.pdf http://irep.iium.edu.my/89040/ https://ieeexplore.ieee.org/stamp/stamp.jsp?arnumber=9374949 |
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