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The radiation effect on low noise amplifier implemented in the space-aerial–terrestrial integrated 5G networks

This paper provides the details of a study on the effects of electron irradiation on two Low Noise Amplifiers (LNA), the Gallium-Arsenide (GaAs) pseudomorphic high electron mobility transistor (pHEMT) based and the Silicon-Germanium (SiGe) Heterojunction Bipolar Transistor (HBT)-based. Previous stud...

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Main Authors: Youssouf, Abdouraouf S., Habaebi, Mohamed Hadi, Hasbullah, Nurul Fadzlin
Format: Article
Language:English
English
English
English
Published: IEEE-Inst Electrical Electronics Engineers Inc 2021
Subjects:
TK Electrical engineering. Electronics Nuclear engineering
Online Access:http://irep.iium.edu.my/89040/13/89040_The%20Radiation%20Effect%20on%20Low%20Noise%20Amplifier_article.pdf
http://irep.iium.edu.my/89040/14/89040_The%20Radiation%20Effect%20on%20Low%20Noise%20Amplifier_scopus.pdf
http://irep.iium.edu.my/89040/15/89040_The%20Radiation%20Effect%20on%20Low%20Noise%20Amplifier_wos.pdf
http://irep.iium.edu.my/89040/2/Acceptance%20letter.pdf
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spelling my.iium.irep.890402022-01-02T13:57:54Z http://irep.iium.edu.my/89040/ The radiation effect on low noise amplifier implemented in the space-aerial–terrestrial integrated 5G networks Youssouf, Abdouraouf S. Habaebi, Mohamed Hadi Hasbullah, Nurul Fadzlin TK Electrical engineering. Electronics Nuclear engineering This paper provides the details of a study on the effects of electron irradiation on two Low Noise Amplifiers (LNA), the Gallium-Arsenide (GaAs) pseudomorphic high electron mobility transistor (pHEMT) based and the Silicon-Germanium (SiGe) Heterojunction Bipolar Transistor (HBT)-based. Previous studies have shown that the properties of GaAs and SiGe HBT’s are very tolerant of gamma, neutron, and proton irradiation without additional radiation hardening. Nowadays, commercials on the shelves (COTS) LNAs have been used in CubeSat space communication systems which may be connected to other communication networks for the implementation of the space-aerial- terrestrial integrated 5G network (SATIN) systems projects, for satellites, launched into Low and Medium Earth Orbits. Previous studies suggest that the electron radiation in space may degrade the LNAs’ performance and might even lead to its failure. Located at the front end of the communication receiver system, this paper conducted such investigation to evaluate the performance under the radiation of the GaAs and SiGe LNAs considering the physics of the technology of each LNA, respectively. The results indicate that both SiGe and GaAs technologies are affected after electron irradiation. As a result, this degradation of the LNAs’ performance affected the communications system performance of the inter-satellite radio link. After the assessment of the quality performance of the communication link at the system level, it has been found that the inter-satellite space link will be at risk under high space radiation dose and the link BER degrades proportionally to the radiation dose level. IEEE-Inst Electrical Electronics Engineers Inc 2021 Article PeerReviewed application/pdf en http://irep.iium.edu.my/89040/13/89040_The%20Radiation%20Effect%20on%20Low%20Noise%20Amplifier_article.pdf application/pdf en http://irep.iium.edu.my/89040/14/89040_The%20Radiation%20Effect%20on%20Low%20Noise%20Amplifier_scopus.pdf application/pdf en http://irep.iium.edu.my/89040/15/89040_The%20Radiation%20Effect%20on%20Low%20Noise%20Amplifier_wos.pdf application/pdf en http://irep.iium.edu.my/89040/2/Acceptance%20letter.pdf Youssouf, Abdouraouf S. and Habaebi, Mohamed Hadi and Hasbullah, Nurul Fadzlin (2021) The radiation effect on low noise amplifier implemented in the space-aerial–terrestrial integrated 5G networks. IEEE Access, 9. pp. 46641-46651. ISSN 2169-3536 https://ieeexplore.ieee.org/stamp/stamp.jsp?arnumber=9374949 10.1109/ACCESS.2021.3065497
institution Universiti Islam Antarabangsa Malaysia
building IIUM Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider International Islamic University Malaysia
content_source IIUM Repository (IREP)
url_provider http://irep.iium.edu.my/
language English
English
English
English
topic TK Electrical engineering. Electronics Nuclear engineering
spellingShingle TK Electrical engineering. Electronics Nuclear engineering
Youssouf, Abdouraouf S.
Habaebi, Mohamed Hadi
Hasbullah, Nurul Fadzlin
The radiation effect on low noise amplifier implemented in the space-aerial–terrestrial integrated 5G networks
description This paper provides the details of a study on the effects of electron irradiation on two Low Noise Amplifiers (LNA), the Gallium-Arsenide (GaAs) pseudomorphic high electron mobility transistor (pHEMT) based and the Silicon-Germanium (SiGe) Heterojunction Bipolar Transistor (HBT)-based. Previous studies have shown that the properties of GaAs and SiGe HBT’s are very tolerant of gamma, neutron, and proton irradiation without additional radiation hardening. Nowadays, commercials on the shelves (COTS) LNAs have been used in CubeSat space communication systems which may be connected to other communication networks for the implementation of the space-aerial- terrestrial integrated 5G network (SATIN) systems projects, for satellites, launched into Low and Medium Earth Orbits. Previous studies suggest that the electron radiation in space may degrade the LNAs’ performance and might even lead to its failure. Located at the front end of the communication receiver system, this paper conducted such investigation to evaluate the performance under the radiation of the GaAs and SiGe LNAs considering the physics of the technology of each LNA, respectively. The results indicate that both SiGe and GaAs technologies are affected after electron irradiation. As a result, this degradation of the LNAs’ performance affected the communications system performance of the inter-satellite radio link. After the assessment of the quality performance of the communication link at the system level, it has been found that the inter-satellite space link will be at risk under high space radiation dose and the link BER degrades proportionally to the radiation dose level.
format Article
author Youssouf, Abdouraouf S.
Habaebi, Mohamed Hadi
Hasbullah, Nurul Fadzlin
author_facet Youssouf, Abdouraouf S.
Habaebi, Mohamed Hadi
Hasbullah, Nurul Fadzlin
author_sort Youssouf, Abdouraouf S.
title The radiation effect on low noise amplifier implemented in the space-aerial–terrestrial integrated 5G networks
title_short The radiation effect on low noise amplifier implemented in the space-aerial–terrestrial integrated 5G networks
title_full The radiation effect on low noise amplifier implemented in the space-aerial–terrestrial integrated 5G networks
title_fullStr The radiation effect on low noise amplifier implemented in the space-aerial–terrestrial integrated 5G networks
title_full_unstemmed The radiation effect on low noise amplifier implemented in the space-aerial–terrestrial integrated 5G networks
title_sort radiation effect on low noise amplifier implemented in the space-aerial–terrestrial integrated 5g networks
publisher IEEE-Inst Electrical Electronics Engineers Inc
publishDate 2021
url http://irep.iium.edu.my/89040/13/89040_The%20Radiation%20Effect%20on%20Low%20Noise%20Amplifier_article.pdf
http://irep.iium.edu.my/89040/14/89040_The%20Radiation%20Effect%20on%20Low%20Noise%20Amplifier_scopus.pdf
http://irep.iium.edu.my/89040/15/89040_The%20Radiation%20Effect%20on%20Low%20Noise%20Amplifier_wos.pdf
http://irep.iium.edu.my/89040/2/Acceptance%20letter.pdf
http://irep.iium.edu.my/89040/
https://ieeexplore.ieee.org/stamp/stamp.jsp?arnumber=9374949
_version_ 1720979905379827712
score 13.211869

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