Triangular shaped silicon nanowire FET characterization using COMSOL multiphysics

The demands and expectations of high performance devices using Field Effect Transistors (FETs) are increased day by day. In order to obtain transistors with smaller size but with increased speed and performance, device scaling was done. However, making transistor in smaller size is not an easy...

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Bibliographic Details
Main Authors: Yazeer, Mohamed Jameel, Za’bah, Nor Farahidah, Alam, A.H.M. Zahirul
Format: Conference or Workshop Item
Language:English
English
Published: IEEE 2016
Subjects:
Online Access:http://irep.iium.edu.my/54639/1/54639.pdf
http://irep.iium.edu.my/54639/2/54639-Triangular%20Shaped%20Silicon%20Nanowire%20FET%20Characterization%20Using%20COMSOL%20Multiphysics_SCOPUS.pdf
http://irep.iium.edu.my/54639/
http://ieeexplore.ieee.org/document/7808367/
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