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Triangular shaped silicon nanowire FET characterization using COMSOL multiphysics

The demands and expectations of high performance devices using Field Effect Transistors (FETs) are increased day by day. In order to obtain transistors with smaller size but with increased speed and performance, device scaling was done. However, making transistor in smaller size is not an easy...

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Main Authors: Yazeer, Mohamed Jameel, Za’bah, Nor Farahidah, Alam, A.H.M. Zahirul
Format: Conference or Workshop Item
Language:English
English
Published: IEEE 2016
Subjects:
T Technology (General)
Online Access:http://irep.iium.edu.my/54639/1/54639.pdf
http://irep.iium.edu.my/54639/2/54639-Triangular%20Shaped%20Silicon%20Nanowire%20FET%20Characterization%20Using%20COMSOL%20Multiphysics_SCOPUS.pdf
http://irep.iium.edu.my/54639/
http://ieeexplore.ieee.org/document/7808367/
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spelling my.iium.irep.546392017-03-29T00:52:04Z http://irep.iium.edu.my/54639/ Triangular shaped silicon nanowire FET characterization using COMSOL multiphysics Yazeer, Mohamed Jameel Za’bah, Nor Farahidah Alam, A.H.M. Zahirul T Technology (General) The demands and expectations of high performance devices using Field Effect Transistors (FETs) are increased day by day. In order to obtain transistors with smaller size but with increased speed and performance, device scaling was done. However, making transistor in smaller size is not an easy task. One of the challenges with scaling the size of transistor is the short channel effects (SCEs). In order to reduce short channel effects, non-classical FETs were introduced. On top of that, the next transistor technology that was looked into was the semiconductor nanowire FET. In this work, a triangular shaped silicon nanowire (Si NW) FET with 300 nm channel length was designed using latest finite element analysis tool COMSOL Multiphysics and its SCE parameters were measured. The designed triangular shaped Si NW FET shows better performance in reducing the SCEs when compared with a similar sized cylindrical shaped Si NW FET and commercial MOSFET, (ZVNL120A). IEEE 2016 Conference or Workshop Item REM application/pdf en http://irep.iium.edu.my/54639/1/54639.pdf application/pdf en http://irep.iium.edu.my/54639/2/54639-Triangular%20Shaped%20Silicon%20Nanowire%20FET%20Characterization%20Using%20COMSOL%20Multiphysics_SCOPUS.pdf Yazeer, Mohamed Jameel and Za’bah, Nor Farahidah and Alam, A.H.M. Zahirul (2016) Triangular shaped silicon nanowire FET characterization using COMSOL multiphysics. In: 6th International Conference on Computer and Communication Engineering (ICCCE 2016), 25th-27th July 2016, Kuala Lumpur. http://ieeexplore.ieee.org/document/7808367/ 10.1109/ICCCE.2016.109
institution Universiti Islam Antarabangsa Malaysia
building IIUM Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider International Islamic University Malaysia
content_source IIUM Repository (IREP)
url_provider http://irep.iium.edu.my/
language English
English
topic T Technology (General)
spellingShingle T Technology (General)
Yazeer, Mohamed Jameel
Za’bah, Nor Farahidah
Alam, A.H.M. Zahirul
Triangular shaped silicon nanowire FET characterization using COMSOL multiphysics
description The demands and expectations of high performance devices using Field Effect Transistors (FETs) are increased day by day. In order to obtain transistors with smaller size but with increased speed and performance, device scaling was done. However, making transistor in smaller size is not an easy task. One of the challenges with scaling the size of transistor is the short channel effects (SCEs). In order to reduce short channel effects, non-classical FETs were introduced. On top of that, the next transistor technology that was looked into was the semiconductor nanowire FET. In this work, a triangular shaped silicon nanowire (Si NW) FET with 300 nm channel length was designed using latest finite element analysis tool COMSOL Multiphysics and its SCE parameters were measured. The designed triangular shaped Si NW FET shows better performance in reducing the SCEs when compared with a similar sized cylindrical shaped Si NW FET and commercial MOSFET, (ZVNL120A).
format Conference or Workshop Item
author Yazeer, Mohamed Jameel
Za’bah, Nor Farahidah
Alam, A.H.M. Zahirul
author_facet Yazeer, Mohamed Jameel
Za’bah, Nor Farahidah
Alam, A.H.M. Zahirul
author_sort Yazeer, Mohamed Jameel
title Triangular shaped silicon nanowire FET characterization using COMSOL multiphysics
title_short Triangular shaped silicon nanowire FET characterization using COMSOL multiphysics
title_full Triangular shaped silicon nanowire FET characterization using COMSOL multiphysics
title_fullStr Triangular shaped silicon nanowire FET characterization using COMSOL multiphysics
title_full_unstemmed Triangular shaped silicon nanowire FET characterization using COMSOL multiphysics
title_sort triangular shaped silicon nanowire fet characterization using comsol multiphysics
publisher IEEE
publishDate 2016
url http://irep.iium.edu.my/54639/1/54639.pdf
http://irep.iium.edu.my/54639/2/54639-Triangular%20Shaped%20Silicon%20Nanowire%20FET%20Characterization%20Using%20COMSOL%20Multiphysics_SCOPUS.pdf
http://irep.iium.edu.my/54639/
http://ieeexplore.ieee.org/document/7808367/
_version_ 1643614590395744256
score 13.211869

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