Neutron radiation effects on the electrical characteristics of InAs/GaAs quantum dot-in-a-well structures
This paper studies the effects of neutron radiation on the electrical behaviour and leakage current mec hanism of quantum dot-in-a-well (DWELL) semiconductor diodes with fluence ranging from 3 to neutron/cm . After neutron irradiation, the forward bias and reverse bias le akage currents sho...
Saved in:
Main Authors: | Ahmad Fauzi, D., Md Rashid, N. K. A., Mohamed Zin, M. R., Hasbullah, Nurul Fadzlin |
---|---|
Format: | Article |
Language: | English English |
Published: |
IEEE
2015
|
Subjects: | |
Online Access: | http://irep.iium.edu.my/46553/5/46553.pdf http://irep.iium.edu.my/46553/8/46553_Neutron%20radiation%20effects%20on%20the%20electrical_Scopus.pdf http://irep.iium.edu.my/46553/ http://dx.doi.org/10.1109/TNS.2015.2478450 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Similar Items
-
Radiation performance of Gan and InAs/GaAs quantum dot based devices subjected to neutron radiation
by: Ahmad Fauzi, Dhiyauddin, et al.
Published: (2017) -
Correlation between defect density and current leakage in InAs∕GaAs quantum dot-in-well structures
by: Sanchez, A. M., et al.
Published: (2009) -
Effects of high neutron fluence on the electrical characteristics of InAs quantum dot structures
by: Ahmad Fauzi, Dhiyauddin, et al.
Published: (2013) -
Growth parameters of InAs/GaAs quantum dots grown by MOVPE
by: Roslan, Sharizar, et al.
Published: (2006) -
InAs/GaAs quantum dots grown by metal organic chemical vapor deposition at different temperatures
by: Muhammad, Rosnita, et al.
Published: (2008)