Piezoelectric thin films for double electrode CMOS MEMS surface acoustic wave (SAW) resonator
CMOS integration for RF-MEMS is desired to yield compact, low-power and portable devices. In this work, we illustrate the usage of double electrode CMOS SAW resonators using both ZnO and AlN as its piezoelectric material. Double electrode transducers were chosen, as they are better at suppressi...
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| 主要な著者: | , , , , |
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| フォーマット: | 論文 |
| 言語: | English |
| 出版事項: |
Springer Berlin / Heidelberg
2015
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| 主題: | |
| オンライン･アクセス: | http://irep.iium.edu.my/39246/7/39246_Piezoelectric_thin_films_for_double_electrode.pdf http://irep.iium.edu.my/39246/ http://download.springer.com/static/pdf/580/art%253A10.1007%252Fs00542-014-2319-0.pdf?auth66=1415949721_6a3204bd6b5e578de6b1553f69958025&ext=.pdf http://link.springer.com/article/10.1007%2Fs00542-014-2319-0 |
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| 要約: | CMOS integration for RF-MEMS is desired
to yield compact, low-power and portable devices. In this
work, we illustrate the usage of double electrode CMOS
SAW resonators using both ZnO and AlN as its piezoelectric
material. Double electrode transducers were chosen,
as they are better at suppressing undesired acoustic reflections
compared to single electrodes. The structure and
dimension of the device is based on 0.35 μm CMOS process
where the IDTs are fabricated using standard CMOS
fabrication process. 2D Finite element modeling of the
CMOS SAW resonator using COMSOL Multiphysics® is
presented. Two-step eigenfrequency and frequency domain
analyses were performed. The acoustic velocities generated
are 3,925 and 5,953 m/s for ZnO and AlN CMOS
SAW resonator respectively. Higher acoustic displacement
and surface potential were observed in ZnO compared to
AlN. It can be concluded that ZnO thin films have higher electromechanical coupling coefficients and are more efficient than AlN thin films. |
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