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Correlation between defect density and current leakage in InAs∕GaAs quantum dot-in-well structures

We present a study of InAs/GaAs quantum dot-in-well �DWELL� material using transmission electron microscopy and leakage current-voltage measurements. The spacer layers between the DWELL layers have a variety of annealing and growth temperatures. We show that there is a strong correlation between spa...

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Main Authors:	Sanchez, A. M., Beanland, R., Hasbullah, Nurul Fadzlin, Hopkinson, M., David, J. P. R.
Format:	Article
Language:	English
Published:	American Institute of Physics 2009
Subjects:	TK7800 Electronics. Computer engineering. Computer hardware. Photoelectronic devices
Online Access:	http://irep.iium.edu.my/17647/1/Correlation_between_defect_density_and_current_leakage_-_Sanchez_JAP_2009.pdf http://irep.iium.edu.my/17647/ http://dx.doi.org/10.1063/1.3168492
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spelling	my.iium.irep.176472012-02-06T03:33:29Z http://irep.iium.edu.my/17647/ Correlation between defect density and current leakage in InAs∕GaAs quantum dot-in-well structures Sanchez, A. M. Beanland, R. Hasbullah, Nurul Fadzlin Hopkinson, M. David, J. P. R. TK7800 Electronics. Computer engineering. Computer hardware. Photoelectronic devices We present a study of InAs/GaAs quantum dot-in-well �DWELL� material using transmission electron microscopy and leakage current-voltage measurements. The spacer layers between the DWELL layers have a variety of annealing and growth temperatures. We show that there is a strong correlation between spacer layer, annealing temperature, defect density, and these leakage currents, with the most defective sample having 30 times more defects and a leakage current several orders of magnitude above that of the least defective. Cross section transmission electron microscope �TEM� shows that surface roughness above defective dots is responsible for the high defect densities. However, even in the best sample the reverse bias leakage current is several orders of magnitude above that typically seen in quantum well materials and a measurable density of defective dots are observed in planar view TEM. © 2009 American Institute of Physics American Institute of Physics 2009 Article REM application/pdf en http://irep.iium.edu.my/17647/1/Correlation_between_defect_density_and_current_leakage_-_Sanchez_JAP_2009.pdf Sanchez, A. M. and Beanland, R. and Hasbullah, Nurul Fadzlin and Hopkinson, M. and David, J. P. R. (2009) Correlation between defect density and current leakage in InAs∕GaAs quantum dot-in-well structures. Journal of Applied Physics, 106 (2). 024502. ISSN 0021-8979 http://dx.doi.org/10.1063/1.3168492 doi:10.1063/1.3168492
institution	Universiti Islam Antarabangsa Malaysia
building	IIUM Library
collection	Institutional Repository
continent	Asia
country	Malaysia
content_provider	International Islamic University Malaysia
content_source	IIUM Repository (IREP)
url_provider	http://irep.iium.edu.my/
language	English
topic	TK7800 Electronics. Computer engineering. Computer hardware. Photoelectronic devices
spellingShingle	TK7800 Electronics. Computer engineering. Computer hardware. Photoelectronic devices Sanchez, A. M. Beanland, R. Hasbullah, Nurul Fadzlin Hopkinson, M. David, J. P. R. Correlation between defect density and current leakage in InAs∕GaAs quantum dot-in-well structures
description	We present a study of InAs/GaAs quantum dot-in-well �DWELL� material using transmission electron microscopy and leakage current-voltage measurements. The spacer layers between the DWELL layers have a variety of annealing and growth temperatures. We show that there is a strong correlation between spacer layer, annealing temperature, defect density, and these leakage currents, with the most defective sample having 30 times more defects and a leakage current several orders of magnitude above that of the least defective. Cross section transmission electron microscope �TEM� shows that surface roughness above defective dots is responsible for the high defect densities. However, even in the best sample the reverse bias leakage current is several orders of magnitude above that typically seen in quantum well materials and a measurable density of defective dots are observed in planar view TEM. © 2009 American Institute of Physics
format	Article
author	Sanchez, A. M. Beanland, R. Hasbullah, Nurul Fadzlin Hopkinson, M. David, J. P. R.
author_facet	Sanchez, A. M. Beanland, R. Hasbullah, Nurul Fadzlin Hopkinson, M. David, J. P. R.
author_sort	Sanchez, A. M.
title	Correlation between defect density and current leakage in InAs∕GaAs quantum dot-in-well structures
title_short	Correlation between defect density and current leakage in InAs∕GaAs quantum dot-in-well structures
title_full	Correlation between defect density and current leakage in InAs∕GaAs quantum dot-in-well structures
title_fullStr	Correlation between defect density and current leakage in InAs∕GaAs quantum dot-in-well structures
title_full_unstemmed	Correlation between defect density and current leakage in InAs∕GaAs quantum dot-in-well structures
title_sort	correlation between defect density and current leakage in inas∕gaas quantum dot-in-well structures
publisher	American Institute of Physics
publishDate	2009
url	http://irep.iium.edu.my/17647/1/Correlation_between_defect_density_and_current_leakage_-_Sanchez_JAP_2009.pdf http://irep.iium.edu.my/17647/ http://dx.doi.org/10.1063/1.3168492
_version_	1643607328154451968
score	13.211869

Correlation between defect density and current leakage in InAs∕GaAs quantum dot-in-well structures

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