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Low parasitic carrier reservoir of AlGaN-based DUV-LED via controlled-polarization step-graded superlattice electron blocking layer for high luminescence lighting

Achieving high luminescence intensity of deep-ultraviolet light-emitting diode (DUV-LED) is generally performed through the implementation of electron blocking layer (EBL) on the chip’s epilayers. However, the issue of parasitic carrier reservoir that originated from the uncontrolled piezoelectric f...

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Bibliographic Details
Main Authors: Hairol Aman, Mohammad Amirul, Ahmad Noorden, Ahmad Fakhrurrazi, Daud, Suzairi, Abdul Kadir@Jaafar, Muhammad Zamzuri
Format: Article
Language:English
English
Published: IOP Publishing 2024
Subjects:
QC Physics
Online Access:http://irep.iium.edu.my/114024/7/114024_Low%20parasitic%20carrier%20reservoir.pdf
http://irep.iium.edu.my/114024/8/114024_Low%20parasitic%20carrier%20reservoir_Scopus.pdf
http://irep.iium.edu.my/114024/
https://iopscience.iop.org/article/10.1088/1402-4896/ad3adf
https://doi.org/10.1088/1402-4896/ad3adf
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Internet

http://irep.iium.edu.my/114024/7/114024_Low%20parasitic%20carrier%20reservoir.pdf
http://irep.iium.edu.my/114024/8/114024_Low%20parasitic%20carrier%20reservoir_Scopus.pdf
http://irep.iium.edu.my/114024/
https://iopscience.iop.org/article/10.1088/1402-4896/ad3adf
https://doi.org/10.1088/1402-4896/ad3adf

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