Radiation-induced degradation of silicon carbide MOSFETs – a review
Silicon Carbide (SiC) Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) have gained significant attention due to their ability to achieve lower on-resistance, reduced switching losses, and higher switching speeds. However, when exposed to radiation-rich environments, SiC MOSFETs can experi...
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| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English English |
| Published: |
Elsevier
2024
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| Subjects: | |
| Online Access: | http://irep.iium.edu.my/109675/1/Radiation_nduced_degradation_of_silicon_carbide_MOSFETs_A_review.pdf http://irep.iium.edu.my/109675/7/109675_Radiation-induced%20degradation_SCOPUS.pdf http://irep.iium.edu.my/109675/ https://www.sciencedirect.com/science/article/abs/pii/S0921510723008383 |
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