THE MODELING & SIMULATION OF SHORT CHANNEL EFFECTS IN MOSFETS
This is the Final Year Project Final Report of Universiti Teknologi PETRONAS Final Year Student, Asmah binti Abdul Halim (4092) on The Modeling and Simulation of Short Channel Effect in the MOSFET. This report is organized as follow: Chapter 1 (Introduction) explains on the background study of pr...
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| Format: | Final Year Project |
| Language: | English |
| Published: |
Universiti Teknologi PETRONAS
2007
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| Online Access: | http://utpedia.utp.edu.my/9634/1/2007%20-%20The%20Modelling%20%26%20Simulation%20of%20Short%20Channel%20Effects%20in%20Mosfets.pdf http://utpedia.utp.edu.my/9634/ |
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| Summary: | This is the Final Year Project Final Report of Universiti Teknologi PETRONAS Final
Year Student, Asmah binti Abdul Halim (4092) on The Modeling and Simulation of
Short Channel Effect in the MOSFET. This report is organized as follow: Chapter 1
(Introduction) explains on the background study of project, problem statement, as
well as the objective and scope of study. Due to expanding technology, the scale of
device is getting smaller. This has caused the channel length between source and
drain of MOSFETs to be reduced as well, in order to better achieve flow of electron
for faster speed in its application. However, this has resulted in short channel that has
it effects. Thus, the objective of this project is observing the short channel effect and
yet discovers ways to reduce the effects. Chapter 2 is the literature review of the
project which describes on the MOSFET physical structure, MOSFET fabrication,
MOSFET scaling phenomenon as well as the short channel effects been encountered.
It is realized that this topic will be emphasizing more on the threshold voltage aspect
as this voltage distinguishes the conduction from the non-conduction states of MOS
transistor. ATHENA and ATLAS module of SILVACO software are the tools used in
simulating the fabrication and also the electrical performance of the transistors. This
is fully described in Chapter 3. Chapter 4 presents the result obtained from the
process simulation (ATHENA), followed by the device simulation (ATLAS). Short
channel symptoms been observed on the short channel device by considering few
related parameters, followed by few adjustments been done to reduce this problem.
The conclusion and recommendation parts wrapped up this report which can be found
in the Chapter 5. This project of using SILVACO software is really useful in order to
observe the short channel effect, realizing that theMOS technology has beengrowing
at an incredible rate since the development of the first MOSFET. Identifying yet
overcoming the effect is the ultimate goal ofthis project. |
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