BACKEND DESIGN OF WIDEBAND LOW NOISE AMPLIFIER USING 130 NM RF CMOS TECHNOLOGY
Low Noise Amplifier (LNA) is widely applied nowadays for amplify very weak signals usually captured by antenna with reduced noise due to the gain of the LNA. Thus the main concern in this paper is in designing an LNA for ultra-wideband which cover frequency ranging from 3.1 GHz to 10.6 GHz. The desi...
Saved in:
Main Author: | Junaidi, Muhammad Syafiq |
---|---|
Format: | Final Year Project |
Language: | English |
Published: |
IRC
2015
|
Subjects: | |
Online Access: | http://utpedia.utp.edu.my/15572/1/Dissertation%2014662.pdf http://utpedia.utp.edu.my/15572/ |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Similar Items
-
A multiband 130nm CMOS low noise amplifier for LTE bands
by: Kamsani, Noor Ain, et al.
Published: (2015) -
VCO DEVELOPMENT USING 130nm CMOS TECHNOLOGY
by: A/L Arulnathan, Jonathan
Published: (2018) -
Design and evaluation of multimode multiband power amplifier in 130nm CMOS process
by: Thangasamy, Veeraiyah
Published: (2016) -
130 nm low power CMOS analog multiplier
by: Abu Naim, Ahmad Safuan, et al.
Published: (2018) -
Optimized transconductance designs to enhance the linearity performance of RF front-end receiver circuits in 130 NM CMOS technology / Nandini Vitee
by: Nandini , Vitee
Published: (2020)