Investigating the impact of growth temperature on WS2 thin film
Radio-frequency (RF) Magnetron Sputtering was used to deposit thin tungsten di sulfide (WS2 ) films on top of soda lime glass substrates. Deposition temperature of RF magnetron sputtering was varied from room temperature (RT) to 200o C with 50o C interval to investigate the impact on film cha...
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| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Penerbit Universiti Kebangsaan Malaysia
2020
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| Online Access: | http://journalarticle.ukm.my/17356/1/04.pdf http://journalarticle.ukm.my/17356/ https://www.ukm.my/jkukm/si-31-2020/ |
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| Summary: | Radio-frequency (RF) Magnetron Sputtering was used to deposit thin tungsten di sulfide (WS2
) films on top of soda
lime glass substrates. Deposition temperature of RF magnetron sputtering was varied from room temperature (RT) to
200o
C with 50o
C interval to investigate the impact on film characteristics as well as to optimize for suitable application
in thin film solar cells. Structural and opto-electronic properties of as-grown films were investigated and analyzed for
different growth temperatures. All the WS2
films exhibit granular structure consist of rhombohedral phase with a strong
preferential orientation towards (101) crystal plane. Optical bandgaps are ranged from 1.73 eV to 2.3 eV for different
growth temperatures. As-grown films show higher carrier concentration with n-type conductivity. Polycrystalline ultra-thin
WS2
film with bandgap of 2.4 eV, carrier concentration of 2.28 X 1017 cm-3 and resistivity of 1.52 Ω-cm were successfully
achieved at 50o
C with 50 W RF power that can be employed as window layers in thin film solar cells. |
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