Current-Voltage Analysis of Nanoscale Planar and Vertical MOSFET Incorporating Dielectric Pocket

Characterization of nanoscale planar and vertical metal-oxide-semiconductor field effect transistor incorporating dielectric pocket (DP-MOSFET) is demonstrated by using numerical simulation. Vertical MOSFET is one solution to shrink the channel length (Lg) into nanometer regime. The comparison betwe...

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Bibliographic Details

Main Authors:	Mohammed Napiah, Zul Atfyi Fauzan, Ja'afar, Abd Shukur
Format:	Article
Language:	en
Published:	Penerbit Universiti, UTeM 2011
Subjects:	TK Electrical engineering. Electronics Nuclear engineering
Online Access:	http://eprints.utem.edu.my/id/eprint/8532/1/V3N2-05%2841-46%29.pdf http://eprints.utem.edu.my/id/eprint/8532/
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