Laser Anneal-Induced Effects on the NBTI Degradation of Advanced-Process 45nm high-k PMOS
This paper presents the effects imposed on the reliability of advanced-process CMOS devices, specifically the NBTI degradation, subsequent to the integration of laser annealing (LA) in the process flow of a 45nm HfO2/TiN gate stack PMOS device. The laser annealing temperatures were varied from 90...
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| Main Authors: | , , |
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| Format: | Article |
| Language: | en |
| Published: |
Scientific.Net Materials Science and Engineering, Switzerland
2011
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| Subjects: | |
| Online Access: | http://eprints.utem.edu.my/id/eprint/5339/1/ICSME_AMR.189-193.1862.pdf http://eprints.utem.edu.my/id/eprint/5339/ |
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