Wan Muhamad Hatta, S., Soin, N., Abd Hadi, D., & Zhang, J. (2010). NBTI degradation effect on advanced-process 45 nm high-k PMOSFETs with geometric and process. PERGAMON-ELSEVIER SCIENCE LTD, THE BOULEVARD, LANGFORD LANE, KIDLINGTON, OXFORD OX5 1GB, ENGLAND.
Chicago Style (17th ed.) CitationWan Muhamad Hatta, S.F., N. Soin, D. Abd Hadi, and J.F Zhang. NBTI Degradation Effect on Advanced-process 45 Nm High-k PMOSFETs with Geometric and Process. PERGAMON-ELSEVIER SCIENCE LTD, THE BOULEVARD, LANGFORD LANE, KIDLINGTON, OXFORD OX5 1GB, ENGLAND, 2010.
MLA (9th ed.) CitationWan Muhamad Hatta, S.F., et al. NBTI Degradation Effect on Advanced-process 45 Nm High-k PMOSFETs with Geometric and Process. PERGAMON-ELSEVIER SCIENCE LTD, THE BOULEVARD, LANGFORD LANE, KIDLINGTON, OXFORD OX5 1GB, ENGLAND, 2010.
