NBTI degradation effect on advanced-process 45 nm high-k PMOSFETs with geometric and process.

Negative bias temperature instability (NBTI) has become an important reliability concern for nano-scaled complementary metal oxide (CMOS) devices. This paper presents the effect of NBTI for a 45 nmadvanced process high-k dielectric with metal gate PMOS transistor. The device had incorporated advance...

Full description

Bibliographic Details

Main Authors:	Wan Muhamad Hatta, S.F., Soin, N., Abd Hadi, D., Zhang, J.F.
Format:	Article
Language:	en
Published:	PERGAMON-ELSEVIER SCIENCE LTD, THE BOULEVARD, LANGFORD LANE, KIDLINGTON, OXFORD OX5 1GB, ENGLAND 2010
Subjects:	TK Electrical engineering. Electronics Nuclear engineering
Online Access:	http://eprints.utem.edu.my/id/eprint/5338/1/ESREF2010.pdf http://eprints.utem.edu.my/id/eprint/5338/
Tags:	Add Tag No Tags, Be the first to tag this record!