Taguchi method statistical analysis on characterization and optimization of 18- nm double gate MOSFETs

A bi-layer graphene with a multigate structure was intensified and analysed on an 18-nm Metal Oxide Semiconductor Field-Effect Transistor (MOSFET) device to obtain an optimal performance parameter. The device has a gate structure made of Titanium Dioxide (TiO2) that serves as a high-k material and a...

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Bibliographic Details

Main Authors:	Abdul Hamid, Afifah Maheran, Mogan, Pritigavane, Mohd Nizam, Nur Hazwani Naili, Salehuddin, Fauziyah, Sabani, Norhayati
Format:	Article
Language:	en
Published:	Universiti Malaysia Perlis 2024
Online Access:	http://eprints.utem.edu.my/id/eprint/28998/2/01699041220241646101318.pdf http://eprints.utem.edu.my/id/eprint/28998/ https://ejournal.unimap.edu.my/index.php/ijneam/article/view/1282/809 https://doi.org/10.58915/ijneam.v17i4.1282
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