Taguchi method statistical analysis on characterization and optimization of 18- nm double gate MOSFETs
A bi-layer graphene with a multigate structure was intensified and analysed on an 18-nm Metal Oxide Semiconductor Field-Effect Transistor (MOSFET) device to obtain an optimal performance parameter. The device has a gate structure made of Titanium Dioxide (TiO2) that serves as a high-k material and a...
Saved in:
| Main Authors: | , , , , |
|---|---|
| Format: | Article |
| Language: | en |
| Published: |
Universiti Malaysia Perlis
2024
|
| Online Access: | http://eprints.utem.edu.my/id/eprint/28998/2/01699041220241646101318.pdf http://eprints.utem.edu.my/id/eprint/28998/ https://ejournal.unimap.edu.my/index.php/ijneam/article/view/1282/809 https://doi.org/10.58915/ijneam.v17i4.1282 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|