Virtual fabrication in modelling 14 nm horizontal double gate bilayer graphene FET NMOS/PMOS

MOSFET has been the most widely utilized electronic appliance in integrated circuits (ICs) since the beginning of the silicon-based semiconductor material (1970s). With the rapid development of the semiconductor industry, the feature size of MOSFETs has been drastically reduced. In this paper, the m...

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Bibliographic Details

Main Authors:	Mohd Nizam, Nur Hazwani Naili, Abdul Hamid, Afifah Maheran, Salehuddin, Fauziyah, K. E., Kaharudin, Z. A., Noor Faizah
Format:	Conference or Workshop Item
Language:	en
Published:	2024
Online Access:	http://eprints.utem.edu.my/id/eprint/28812/1/Virtual%20fabrication%20in%20modelling%2014%20nm%20horizontal%20double%20gate%20bilayer%20graphene%20FET%20NMOS%20PMOS.pdf http://eprints.utem.edu.my/id/eprint/28812/ https://doi.org/10.1063/5.0192735
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