Investigation on the ohmic characteristic of Ni/Ti/4H-SiC

Ohmic contact is important for silicon carbide (SiC) devices such as Schottky diode, junction field effect transistor (JFET) and metal oxide transistor (MOSFET). The effect of post metallization annealing (PMA) on the ohmic characteristics of Ni/Ti/4H-SiC is investigated. The samples were annealed u...

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Bibliographic Details

Main Authors:	Idris, Muhammad Idzdihar, Mohammed Napiah, Zul Atfyi Fauzan, Rashid, Marzaini, Zainudin, Muhammad Noorazlan Shah, Mohd Chachuli, Siti Amaniah, Mohd Abid, Mohd Asyadi 'Azam
Format:	Article
Language:	en
Published:	Institute of Advanced Engineering and Science 2021
Online Access:	http://eprints.utem.edu.my/id/eprint/25845/2/3174-7379-1-PB.PDF http://eprints.utem.edu.my/id/eprint/25845/ https://beei.org/index.php/EEI/article/view/3174/2318
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