Performance Evaluation of SRAM-PUF based on 7-nm, 10-nm and 14-nm FinFET Technology Nodes
As complementary metal-oxide semiconductor (CMOS) technology continues to scale down to ultra-deep submicron (UDSM) technology, the planar metal-oxide semiconductor fieldeffect transistor (MOSFET) structure reaches its limit. As the channel length shrinks, the gate no longer has full control over th...
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| Main Authors: | , , , |
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| Format: | Article |
| Language: | en |
| Published: |
Universiti Malaysia Perlis
2021
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| Online Access: | http://eprints.utem.edu.my/id/eprint/25697/2/2021_PERFORMANCE%20EVALUATION%20OF%20SRAM-PUF%20BASED%20ON%207-NM%2C%2010-NM%20AND%2014-NM%20FINFET%20TECHNOLOGY%20NODES.PDF http://eprints.utem.edu.my/id/eprint/25697/ https://ijneam.unimap.edu.my/images/PDF/ijneam%20october%202021%20pdf/IJNEAM2021009_Final_pr_Verified%20(1).pdf |
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http://eprints.utem.edu.my/id/eprint/25697/2/2021_PERFORMANCE%20EVALUATION%20OF%20SRAM-PUF%20BASED%20ON%207-NM%2C%2010-NM%20AND%2014-NM%20FINFET%20TECHNOLOGY%20NODES.PDFhttp://eprints.utem.edu.my/id/eprint/25697/
https://ijneam.unimap.edu.my/images/PDF/ijneam%20october%202021%20pdf/IJNEAM2021009_Final_pr_Verified%20(1).pdf