Characterization Of SiO2/SiC Interface Of Phosphorous-Doped MOS Capacitors By Conductance Measurements
Interface states of MOS structures capacitors incorporated with low levels of phosphorous have been investigated by conductance and C-ψs method. The frequency response of interface states was observed by the conductance method up to 10 MHz. The correlation between the frequency response of interface...
Saved in:
| Main Authors: | , , , , |
|---|---|
| Format: | Article |
| Language: | en |
| Published: |
Blue Eyes Intelligence Engineering and Sciences Publication
2019
|
| Online Access: | http://eprints.utem.edu.my/id/eprint/24544/2/IJRTE_M.I.IDRIS.PDF http://eprints.utem.edu.my/id/eprint/24544/ https://www.ijrte.org/wp-content/uploads/papers/v8i3/C5316098319.pdf |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|