Universal Mobility-Field Curves For Electrons In Polysilicon Inversion Layer

This paper reports the studies on the inversion-layer mobility in n-channel Poly-Si TFT’s with 1016cm-3 substrate impurity concentration. The validity and limitations of the universal relationship between the inversion layer mobility and the effective normal field (Eeff) was examined.

Bibliographic Details

Main Authors:	Muhammad Idzdihar , Idris, Faiz , Arith, Siti Amaniah , Mohd Chachuli, Haziezol Helmi, M. Yusof
Format:	Article
Language:	en
Published:	IJENS 2013
Subjects:	QA75 Electronic computers. Computer science
Online Access:	http://eprints.utem.edu.my/id/eprint/12543/1/1312703-1305-9494-IJECS-IJENS.pdf http://eprints.utem.edu.my/id/eprint/12543/
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