Properties of silicon carbide polytypes under high pressure influence calculated using DFT

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Bibliographic Details
Main Authors:	Emhemed A.M.M., Zabidi N.A., Rosli A.N.
Other Authors:	Faculty of Science and Technology
Format:	Conference Paper
Language:	English en_US
Published:	Trans Tech Publications Ltd 2024
Subjects:	DFT Electronic structure Lattice parameters Pressure influence Sic polytypes Crystal structure Electronic properties Energy gap High pressure effects Lattice constants Molecular dynamics Silicon carbide Silicon compounds Applied pressure Conduction band edge Hexagonal structures Pressure increase Pseudopotentials SiC polytypes Structural and electronic properties Volume reductions Density functional theory
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