Electrical Properties of a Ga0.952In0.048N0.016As0.984 p-i-n Schottky Barrier Diode

ASM Sc. J., 12, Special Issue 4, 2019 for ICSE2018, 131-138

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Bibliographic Details
Main Authors:	Muhammad Izzuddin Abd Samad, Mohammad Syahmi Nordin, Nafarizal Nayan, Afishah Alias, Adrian Boland-Thoms, Anthony John Vickers, Khairul Anuar Mohamad, Marinah Othman
Format:	Article
Language:	en
Published:	The Academy of Sciences Malaysia 2024
Subjects:	GaInNAs; p-i-n diode; current-voltage; barrier height; thermionic emission theory
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