Photoelectric properties of metal-semiconductor-metal photodetector based on porous silicon
Metal-semiconductor-metal (MSM) photodetector was fabricated on a Porous silicon (PS) layer that was prepared using photo electrochemical etching (PEC). The surface morphology of the PS was carried out by field emission scanning electron microscopy. The I-V characteristics under dark and illuminated...
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| Main Authors: | , , , , |
|---|---|
| Format: | Article |
| Language: | en |
| Published: |
The Malaysian Solid State Science and Technology Society
2016
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| Online Access: | http://psasir.upm.edu.my/id/eprint/53564/1/Photoelectric%20properties%20of%20metal-semiconductor-metal%20photodetector%20based%20on%20porous%20silicon.pdf http://psasir.upm.edu.my/id/eprint/53564/ http://ufds.uofallujah.edu.iq/dspace/bitstream/123456789/1249/1/Photoelectric%20properties%20of%20Metal-Semiconductor-Metal%20Photodetector%20based%20on%20Porous%20Silicon.pdf |
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Internet
http://psasir.upm.edu.my/id/eprint/53564/1/Photoelectric%20properties%20of%20metal-semiconductor-metal%20photodetector%20based%20on%20porous%20silicon.pdfhttp://psasir.upm.edu.my/id/eprint/53564/
http://ufds.uofallujah.edu.iq/dspace/bitstream/123456789/1249/1/Photoelectric%20properties%20of%20Metal-Semiconductor-Metal%20Photodetector%20based%20on%20Porous%20Silicon.pdf