Simulation-based evaluation of power efficiency and output capacitance in standalone PV MPPT buck converters using 200 V p-GaN HEMTs
This study addresses the inefficiencies and limitations of conventional silicon-based MOSFETs in photovoltaic (PV) Maximum Power Point Tracking (MPPT) buck converters by introducing a simulation based approach to assess 200 V Schottky p-GaN High Electron Mobility Transistors (HEMTs). Motivated by th...
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| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | en |
| Published: |
Korean Institute of Electrical Engineers
2025
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| Subjects: | |
| Online Access: | http://psasir.upm.edu.my/id/eprint/122352/1/122352.pdf http://psasir.upm.edu.my/id/eprint/122352/ https://link.springer.com/article/10.1007/s42835-025-02334-y?error=cookies_not_supported&code=5d9553ce-e7fc-4a6f-beac-eebb30d8d96f |
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