SPICE modeling and performance analysis of EnhancementMode GaN HEMT for augmented hard-switching energy conversion efficiency

The advancement of renewable energy sources necessitates the development of effective power electronic devices. Enhancement-mode Gallium Nitride (E-GaN) high-electronmobility transistors (HEMTs), an emerging wide-bandgap semiconductor device, demonstrate potential in photovoltaic (PV) energy convert...

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Bibliographic Details

Main Authors:	Liu, Xinzhi, Shafie, Suhaidi, Mohd Radzi, Mohd Amran, Azis, Norhafiz, Norddin, Nurbahirah, Lawal, Ismail, Zulkifli, Normaziah, Abdul Karim, Abdul Hafiz
Format:	Article
Language:	en
Published:	Universiti Putra Malaysia Press 2024
Online Access:	http://psasir.upm.edu.my/id/eprint/113546/1/113546.pdf http://psasir.upm.edu.my/id/eprint/113546/ http://www.pertanika.upm.edu.my/pjst/browse/regular-issue?article=JST-4540-2023
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