Taguchi optimization of a SOI-based lateral PIN photodiode using SiGe/Si multilayer quantum well

Taguchi optimization of a SOI-based lateral PIN photodiode using SiGe/Si multilayer quantum well

Silicon-on-insulator (SOI) based SiGe quantum well infrared pin photodiode has the potential of being a serious candidate for applications in sensing applications as well as in optical fiber communications. The objective of this paper is to optimize the process parameters for a SOI-based lateral PIN...

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Bibliographic Details
Main Authors: Menon P.S., Tasirin S.K., Ahmad I., Islam S., Abdullah S.F.
Other Authors: 57201289731
Format: Article
Published: National Institute of Optoelectronics 2023
Subjects:
ATHENA
ATLAS
Photodetector device
Taguchi method
Bias voltage
Frequency response
Multilayers
Optical fiber communication
Optical fiber fabrication
Optical fibers
Photodiodes
Si-Ge alloys
Silicon on insulator technology
Taguchi methods
Electrical characterization
Fabrication parameters
Fabrication simulation
Lateral PIN photodiodes
Silicon-on- insulators (SOI)
Taguchi optimization method
Semiconductor quantum wells
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