Power emission enhancement of light emitting diode by using InN based quantum dot
This paper highlights the enhancement of emitted power from light emitting diodes using InN based quantum dot in the active layer of the device structure. We have developed mathematical models and analyzed numerically the temperature dependence of the degradation rate of the device lifetime, the e...
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| Main Authors: | , , |
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| Format: | Article |
| Language: | en |
| Published: |
2015
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| Subjects: | |
| Online Access: | http://eprints.unisza.edu.my/4974/1/FH02-FSTK-15-03741.pdf http://eprints.unisza.edu.my/4974/ |
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