Optimization of Nitride deposition process using Taguchi method

The process of plasma enhanced chemical vapor deposition silicon nitride film which is used as barrier layer for the doped oxide in premetal dielectric (PMD) application and optimized using Design of Experiment (DOE) approach. Design of Experiment (DOE) is a technique for optimizing process which ha...

Full description

Bibliographic Details

Main Author:	Low Zen Shiang
Other Authors:	Noraini Othman (Advisor)
Format:	Learning Object
Language:	en
Published:	Universiti Malaysia Perlis 2008
Subjects:	Silicon Silicon nitride Microelectronics > Materials Chemical Vapor Deposition (CVD) Taguchi method Semiconductors
Online Access:	http://dspace.unimap.edu.my/123456789/1948
Tags:	Add Tag No Tags, Be the first to tag this record!