Investigation and Modeling of Boron Diffusion Reduction in Silicon by Flourine Implantation using Numerical Simulation

Investigation and Modeling of Boron Diffusion Reduction in Silicon by Flourine Implantation using Numerical Simulation

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Bibliographic Details
Main Author: Chuah Soo Kiet
Other Authors: Sharifah Norfaezah Sabki (Advisor)
Format: Learning Object
Language:en
Published: Universiti Malaysia Perlis 2008
Subjects:
Silicon
Transient enhanced diffusion (TED)
Organometallic compounds
Boron compounds
Boron
Semiconductor devices
Fluorine
Online Access:http://dspace.unimap.edu.my/123456789/1348
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