Simulation on Effects of Different Types of Channel/Drain Engineering Structure on MOS Device Performance

This final year project is aimed to analyze the effects of three different types of channel/drain engineering structure on MOS transistor performance. As a project basis, a 0.35μm process recipe from UC Berkeley is used as reference. To proceed it, the other parameters need to be retained and only t...

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Bibliographic Details

Main Author:	Norazlina Mohd Amin
Other Authors:	Noraini Othman (Advisor)
Format:	Learning Object
Language:	en
Published:	Universiti Malaysia Perlis 2008
Subjects:	Metal oxide semiconductors MOS transistor Lightly Doped Drain (LDD) Moderately Doped Drain (MDD) Halo-Implantation structure Metal oxide semiconductors > Mathematical models
Online Access:	http://dspace.unimap.edu.my/123456789/1338
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