Nano-ballistic saturation Velocity modelling to enhance circuit performances of Nano-Mosfet
The modeling of nano-ballistic carrier transport nature across the nanoscale channel of a MOSFET based on streamlining of the randomly oriented velocity vectors in the presence of high electric field has been successfully done in this project. Detailed explanation of low-dimensional energy spectrum...
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| Format: | Research Report |
| Language: | en |
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Universiti Malaysia Sabah
2010
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| Online Access: | https://eprints.ums.edu.my/id/eprint/22879/1/Nano%20ballistic%20saturation%20Velocity%20modelling%20to%20enhance%20circuit%20performances.pdf https://eprints.ums.edu.my/id/eprint/22879/ |
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