Electrical characterization of si nanowire GAA-TFET based on dimensions downscaling

This research paper explains the effect of the dimensions of Gate-all-around Si nanowire tunneling field effect transistor (GAA Si-NW TFET) on ON/OFF current ratio, drain induces barrier lowering (DIBL), sub-threshold swing (SS), and threshold voltage (VT). These parameters are critical factors of t...

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Bibliographic Details

Main Authors:	Abdul-Kadir, Firas Natheer, Hashim, Yasir, Shakib, Mohammed Nazmus, Taha, Faris Hassan
Format:	Article
Language:	en
Published:	Institute of Advanced Engineering and Science (IAES) 2021
Subjects:	TK Electrical engineering. Electronics Nuclear engineering
Online Access:	https://umpir.ump.edu.my/id/eprint/29625/1/3.%20Electrical%20characterization%20of%20si%20nanowire%20GAA-TFET.pdf http://doi.org/10.11591/ijece.v11i1.pp780-787 https://umpir.ump.edu.my/id/eprint/29625/
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