Dual characteristics of molybdenum disulfide based PN heterojunction photodetector prepared via drop-cast technique
A p-silicon/molybdenum disulfide (p-Si/MoS2) p-n heterojunction photodetector (PD) is proposed and fabricated using the drop-casting technique. The composition of elements in the localized surface morphology enables for excellent photoconduction under 380 nm illumination at various ultraviolet (UV)...
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| Main Authors: | , , |
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| Format: | Article |
| Published: |
Elsevier
2019
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| Subjects: | |
| Online Access: | http://eprints.um.edu.my/24334/ https://doi.org/10.1016/j.ijleo.2019.05.033 |
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