APA (7th ed.) Citation

Othman, N. A. F., Hatta, S. F. W. M., & Soin, N. (2018). Impact of Channel, Stress-Relaxed Buffer, and S/D Si1−xGe x Stressor on the Performance of 7-nm FinFET CMOS Design with the Implementation of Stress Engineering. Springer.

Chicago Style (17th ed.) Citation

Othman, Nurul Aida Farhana, Sharifah Fatmadiana Wan Muhamad Hatta, and Norhayati Soin. Impact of Channel, Stress-Relaxed Buffer, and S/D Si1−xGe X Stressor on the Performance of 7-nm FinFET CMOS Design with the Implementation of Stress Engineering. Springer, 2018.

MLA (9th ed.) Citation

Othman, Nurul Aida Farhana, et al. Impact of Channel, Stress-Relaxed Buffer, and S/D Si1−xGe X Stressor on the Performance of 7-nm FinFET CMOS Design with the Implementation of Stress Engineering. Springer, 2018.