Impact of Channel, Stress-Relaxed Buffer, and S/D Si1−xGe x Stressor on the Performance of 7-nm FinFET CMOS Design with the Implementation of Stress Engineering

Stress-engineered fin-shaped field effect transistors (FinFET) using germanium (Ge) is a promising performance booster to replace silicon (Si) due to its high holes mobility. This paper presents a three-dimensional simulation by the Sentaurus technology computer-aided design to study the effects of...

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Bibliographic Details

Main Authors:	Othman, Nurul Aida Farhana, Hatta, Sharifah Fatmadiana Wan Muhamad, Soin, Norhayati
Format:	Article
Published:	Springer 2018
Subjects:	TK Electrical engineering. Electronics Nuclear engineering
Online Access:	http://eprints.um.edu.my/21051/ https://doi.org/10.1007/s11664-017-6058-8
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